159 radhard msi logic ut54acs244/ut54acts244 radiation-hardened octal buffers & line drivers, three-state outputs features three-state outputs drive bus lines or buffer memory address registers radiation-hardened cmos - latchup immune high speed low power consumption single 5 volt supply available qml q or v processes flexible package - 20-pin dip - 20-lead flatpack description the ut54acs244 and the ut54acts244 are non-inverting octal buffer and line drivers which improve the performance and density of three-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. the devices are characterized over full military temperature range of -55 c to +125 c. function table logic symbol pinouts 20-pin dip top view 20-lead flatpack top view inputs output 1g , 2g a y l l l l h h h x z (1) 1 g en (2) 1a1 (4) 1a2 (6) 1a3 (8) 1a4 (18) 1y1 (12) 1y4 (14) 1y3 (16) 1y2 (19) 2g en (11) 2a1 (13) 2a2 (15) 2a3 (17) 2a4 (9) 2y1 (3) 2y4 (5) 2y3 (7) 2y2 note: 1. logic symbol in accordance with ansi/ieee std 91-1984 and iec publication 617-12. 1g 1a1 2y4 1a2 2y3 1a3 2y2 v dd 2g 1y1 2a4 1y2 1y3 1a4 2a2 2a3 2y1 1y4 v ss 2a1 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 1g 1a1 2y4 1a2 2y3 1a3 2y2 v dd 2g 1y1 2a4 1y2 1y3 1a4 2a2 2a3 2y1 1y4 v ss 2a1 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 .com .com .com .com 4 .com u datasheet
radhard msi logic 160 ut54acs244/ut54acts244 logic diagram radiation hardness specifications 1 notes: 1. logic will not latchup during radiation exposure within the limits defined in the table 2. device storage elements are immune to seu affects. absolute maximum ratings note: 1. stresses outside the listed absolute maximum ratings may cause permanent damage to the device. this is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. exposure to absolute ma ximum rating conditions for extended periods may affect device reliability. parameter limit units total dose 1.0e6 rads(si) seu threshold 2 80 mev-cm 2 /mg sel threshold 120 mev-cm 2 /mg neutron fluence 1.0e14 n/cm 2 1a1 1a2 1a3 1a4 1 g (2) (4) (6) (8) (1) (16) (14) (12) (18) 1y1 1y2 1y3 1y4 2a1 2a2 2a3 2a4 2 g (11) (13) (15) (17) (19) (7) (5) (3) (9) 2y1 2y2 2y3 2y4 symbol parameter limit units v dd supply voltage -0.3 to 7.0 v v i/o voltage any pin -.3 to v dd +.3 v t stg storage temperature range -65 to +150 c t j maximum junction temperature +175 c t ls lead temperature (soldering 5 seconds) +300 c jc thermal resistance junction to case 20 c/w i i dc input current 10 ma p d maximum power dissipation 1 w .com .com .com .com .com 4 .com u datasheet
161 radhard msi logic ut54acs244/ut54acts244 recommended operating conditions symbol parameter limit units v dd supply voltage 4.5 to 5.5 v v in input voltage any pin 0 to v dd v t c temperature range -55 to + 125 c .com .com .com .com .com 4 .com u datasheet
radhard msi logic 162 ut54acs244/ut54acts244 dc electrical characteristics 7 (v dd = 5.0v 10%; v ss = 0v 6 , -55 c < t c < +125 c) symbol parameter condition min max unit v il low-level input voltage 1 acts acs 0.8 .3v dd v v ih high-level input voltage 1 acts acs .5v dd .7v dd v i in input leakage current acts/acs v in = v dd or v ss -1 1 a v ol low-level output voltage 3 acts acs i ol = 12.0ma i ol = 100 a 0.40 0.25 v v oh high-level output voltage 3 acts acs i oh = -12.0ma i oh = -100 a .7v dd v dd - 0.25 v i ol output current 10 (sink) v in = v dd or v ss v ol = 0.4v 12 ma i oh output current 10 (source) v in = v dd or v ss v oh = v dd - 0.4v -12 ma i oz three-state output leakage current v o = v dd and v ss -30 30 a i os short-circuit output current 2 ,4 acts/acs v o = v dd and v ss -300 300 ma p total power dissipation 2,8,9 c l = 50pf 2.0 mw/ mhz i ddq quiescent supply current v dd = 5.5v 10 a i ddq quiescent supply current delta acts for input under test v in = v dd - 2.1v for all other inputs v in = v dd or v ss v dd = 5.5v 1.6 ma c in input capacitance 5 = 1mhz @ 0v 15 pf c out output capacitance 5 = 1mhz @ 0v 15 pf .com .com .com .com .com 4 .com u datasheet
163 radhard msi logic ut54acs244/ut54acts244 notes: 1. functional tests are conducted in accordance with mil-std-883 with the following input test conditions: v ih = v ih (min) + 20%, - 0%; v il = v il (max) + 0%, - 50%, as specified herein, for ttl, cmos, or schmitt compatible inputs. devices may be tested using any input voltage within th e above specified range, but are guaranteed to v ih (min) and v il (max). 2. supplied as a design limit but not guaranteed or tested. 3. per mil-prf-38535, for current density 5.0e5 amps/cm 2 , the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pf/mhz. 4. not more than one output may be shorted at a time for maximum duration of one second. 5. capacitance measured for initial qualification and when design changes may affect the value. capacitance is measured between the designated terminal and v ss at frequency of 1mhz and a signal amplitude of 50mv rms maximum. 6. maximum allowable relative shift equals 50mv. 7. all specifications valid for radiation dose 1e6 rads(si). 8. power does not include power contribution of any ttl output sink current. 9. power dissipation specified per switching output. 10. this value is guaranteed based on characterization data, but not tested. .com .com .com .com .com 4 .com u datasheet
radhard msi logic 164 ut54acs244/ut54acts244 ac electrical characteristics 2 (v dd = 5.0v 10%; v ss = 0v 1 , -55 c < t c < +125 c) notes: 1. maximum allowable relative shift equals 50mv. 2. all specifications valid for radiation dose 1e6 rads(si). symbol parameter minimum maximum unit t plh input to yn 1 11 ns t phl input to yn 1 11 ns t pzl g low to yn active 2 12 ns t pzh g low to yn active 2 12 ns t plz g high to yn three-state 2 12 ns t phz g high to yn three-state 2 12 ns .com .com .com .com 4 .com u datasheet
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